Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system

ABSTRACT

Electrochemical corrosion of a reflective layer provided in a scintillator panel is prevented. The scintillator panel includes a conductive base member for supporting a wavelength converter layer and a reflective layer for emitting light converted by a phosphor layer to the outside, in which an insulating layer is formed between the conductive base member and the reflective layer. Alternatively, the above problem is solved by a scintillator panel in which the full circumference including the base member surface side of the reflective layer, the wavelength converter layer side of the reflective layer, and end surfaces of the reflective layer is covered with an insulating layer or a protective film for the reflective layer and a radiation imaging device using such a scintillator panel.

This is a divisional application of application Ser. No. 10/061,319,filed Feb. 4, 2002, now allowed, the contents of which are incorporatedby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a scintillator panel, a radiationdetection device, and a radiation detection system, and moreparticularly a scintillator panel, a radiation detection device, and aradiation detection system for, for example, a medical X-ray imagingapparatus, an X-ray imaging apparatus for an industrial nondestructivetest, or the like.

Note that, it is assumed in this specification that variouselectromagnetic waves such as an X-ray, an α-ray, a β-ray, and a γ-rayare included in a category of radiation and the description will be madeon the basis thereof.

2. Related Background Art

Recently, digitization in the medical machine market is accelerated.Also, with respect to an X-ray image pickup system, a paradigm shiftfrom a conventional film screen system to an X-ray digital radiographysystem is progressed.

Of X-ray detection devices for an X-ray image pickup having an X-raydigital radiography system, there is a device in which a sensor paneland a scintillator are adhered to each other through an adhesion layermade of a transparent adhesive. Note that the sensor panel includes aphotoelectric conversion element portion having a photosensor usingamorphous silicon and the like and a TFT. The scintillator includes aphosphor layer made of a fluorescent substance and a reflective filmsuch as a metallic thin film for reflecting visible light emitted fromthe phosphor layer to the sensor panel side.

With respect to such an X-ray detection device, various elements can becombined according to a purpose without limiting an element structure ofthe sensor panel and a fluorescent substance material of thescintillator.

Next, an operation of the X-ray detection device will be described.First, when an X-ray enters the main body of the device, it istransmitted through the reflective layer and absorbed in the phosphorlayer. After that, the phosphor layer emits visible light having anintensity corresponding to the absorbed X-ray. The visible light isconverted into an electrical signal by the photosensor in thephotoelectronic conversion element portion and outputted to the outsidein accordance with switching of an on/off of the TFT. Thus, informationof the input X-ray is converted into a two-dimensional digital image.

Here, various base members composing the scintillator are considered.However, it is preferable that amorphous carbon or the like is usedbecause of the following reasons.

-   (1) Since the absorption of an X-ray is small as compared with glass    and aluminum, a larger amount of X-rays can be emitted to the    phosphor layer side. For example, in the case where respective    materials are set to be practical thicknesses (OA-10 glass plate    produced by Nippon Electric Glass Co., Ltd.: 0.7 mm, Al plate: 0.5    mm, and amorphous carbon plate: 1 mm), when photon energy is 60 keV    or higher in any materials, transmittance of 90% or higher can be    kept. However, transmittance is greatly reduced in the case of 60    keV or lower in the OA-10 glass plate and in the case of 35 keV or    lower in the Al plate. On the other hand, although the amorphous    carbon plate is thicker than other materials, transmittance of 95%    or higher is kept in the case of 20 keV or higher. Thus, a nearly    flat transmittance characteristic can be indicated within an energy    region of an X-ray used in a medical field.-   (2) Amorphous carbon has a superior medicine resistance. There is no    case where amorphous carbon is eroded by strong acid such as    hydrofluoric acid and a solvent.-   (3) Amorphous carbon has a superior heat resistance. The amorphous    carbon has a higher heat resistance than glass and aluminum.-   (4) Amorphous carbon has a good conductive property. Since the    amorphous carbon has a conductivity σ of 2.4×10⁻² Ω⁻¹ cm⁻¹, it also    serves as an electromagnetic shield and for preventing electrostatic    discharge in manufacturing.-   (5) Since the thermal expansion coefficient is close to that of    glass, when amorphous carbon is bonded to a base member made of    glass etc., a possibility of peeling and the like by a difference of    an expansion coefficient after bonding is low. Although thermal    expansion coefficient of generally used panel glass is 4.6×10⁻⁶,    that of amorphous carbon is close to this value and 2.0×10⁻⁶.

Also, the reason why the reflective layer is used is as follows. Thatis, since the reflectance of amorphous carbon or the like to an airlayer is about 20% and low, the reflective layer made from a metallicthin film is provided to improve light utilization efficiency. Variousmaterials are considered for a material for the reflective layer.However, it is preferable that a metallic film made of aluminum etc. isused as a material for the reflective layer because of the followingreasons.

-   (1) High reflectance is indicated approximately through the entire    region of visible light. Note that detailed information is described    in Journal of the Optical Society of America, Vol. 45, No. 11, p945,    1955.-   (2) It is a low cost.-   (3) A thin film formed by evaporation is easy to obtain a mirror    surface and the occurrence of disturbance of resolving power due to    diffuse reflection is less.

Also, a scintillator including these materials is concretelymanufactured by the following method. First, a base member made ofamorphous carbon or the like, whose surface is polished to be a mirrorsurface is washed and then an aluminum thin film is formed thereon bysputtering or the like. When the aluminum thin film is too thick,diffuse reflection is caused by uneven portions in the surface. On theother hand, when it is too thin, light is transmitted. Thus, thethickness is generally set to be 100 nm to 500 nm.

Next, a column-shaped phosphor layer is formed on the aluminum thin filmby evaporation. A process temperature at this time exceeds 200° C. inmany cases. After that, a protective layer is formed around the phosphorlayer to complete a scintillator.

However, the following was cleared from our studies. That is, in theabove-mentioned method, when alkali halide phosphor, for example, CsI isformed on a reflective layer which is formed in a conductive base membermade of amorphous carbon or the like, corrosion of the reflective layeris started within several days. As this reason, it is considered thataluminum as a material for the reflective layer is corroded by halogenin CsI, that is, iodine.

As one method of preventing this corrosion, it is considered that aprotective layer is provided in a front surface side of the reflectivelayer. However, it is found that corrosion caused within a short timecannot be suppressed. Also, with respect to such a problem, it is foundthat the occurrence of corrosion is greatly suppressed in the case whereglass is used as a material for the base member and aluminum is used asa material for the reflective layer.

Thus, it is considered that electrochemical corrosion caused in the casewhere a conductive material (such as a material including a carboncomponent, for example, amorphous carbon or a material including asilicon component) and a different kind of conductive material for areflective film of metal such as aluminum are laminated is greatlyrelated to another reason why the reflective layer is corroded.

Here, according to Japanese Patent Application Laid-open No. 53-122356,it is described that a phosphor made of cesium iodide is provided on theentire surface of a substrate through an aluminum evaporation film.However, from the same reason as above, electrochemical corrosion cannotbe prevented by the technique described in this document.

Also, according to Japanese Patent Application Laid-open No. 10-160898,the structure using an insulator such as PET or glass as a base memberis disclosed. However, since the base member itself is an insulator,electrochemical corrosion is not almost caused between the base memberand a reflective layer.

As described above, the electrochemical corrosion of the reflectivelayer in the scintillator panel, that is, corrosions of the reflectivelayer and the phosphor layer due to reaction between the base member andthe reflective layer becomes a problem to be solved in order to realizea scintillator panel having high reliability for a long period.

In addition, when a reflective film made of Al or the like is directlyformed on a base member made of amorphous carbon or the like byevaporation, since the adhesion to the surface of the amorphous carbonis not preferable, there is a problem in that peeling is caused in aninterface between the base member and the reflective layer. There may bethe case where this also becomes a problem when realizing a scintillatorpanel having high reliability.

SUMMARY OF THE INVENTION

In order to solve at least one of the above-mentioned problems, thepresent invention relates to a scintillator panel including a conductivebase member for supporting a wavelength converter and a reflective layerfor reflecting light converted by the phosphor layer and outside lightradiated from outside, characterized in that an insulating layer isformed between the conductive base member and the reflective layer.

Also, according to the present invention, a radiation detection deviceincluding a scintillator panel is characterized by comprising aphotoelectric conversion element for converting light emitted from thescintillator panel side into an electrical signal and a wiring portionfor transmitting the electrical signal converted by the photoelectricconversion element.

Further, according to the present invention, a method of manufacturing ascintillator panel including a conductive base member for supporting aphosphor layer and a reflective layer for emitting light converted bythe phosphor layer to an outside, is characterized by comprising a stepof forming an insulating layer having a heat resistance to a temperatureat deposition of the phosphor layer, between the conductive base memberand the reflective layer.

Further, a radiation detection system according to the presentinvention, is characterized by comprising the radiation detectiondevice, signal processing means for processing a signal from theradiation detection device, recording means for recording the signalfrom the signal processing means, display means for displaying thesignal from the signal processing means, transmission processing meansfor transmitting the signal from the signal processing means, and aradiation generating source for generating the radiation.

Also, a scintillator panel including a base member for supporting awavelength converter layer and a reflective layer for reflecting lightconverted by the wavelength converter layer to the opposite side of thebase member, is characterized in that a full circumference including abase member surface side of the reflective layer, the phosphor layerside, and end surfaces is covered with one of an insulating layer and aprotective film for the reflective layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross sectional view of a radiation detectiondevice of Embodiment 1 of the present invention;

FIGS. 2A and 2B show steps of manufacturing the radiation detectiondevice shown in FIG. 1;

FIG. 3 is a cross sectional view of a scintillator according to aradiation detection device of Embodiment 2 of the present invention;

FIGS. 4A and 4B show steps of manufacturing the scintillator shown inFIG. 3;

FIG. 5 is a cross sectional view of a scintillator according to aradiation detection device of Embodiment 3 of the present invention;

FIGS. 6A, 6B and 6C show steps of manufacturing the radiation detectiondevice shown in FIG. 5;

FIG. 7 is a schematic cross sectional view of a scintillator accordingto a radiation detection device of Embodiment 4 of the presentinvention;

FIGS. 8A, 8B and 8C show steps of manufacturing the radiation detectiondevice shown in FIG. 7;

FIG. 9 is a schematic cross sectional view of a scintillator accordingto a radiation detection device of Embodiment 5 of the presentinvention;

FIGS. 10A and 10B are schematic cross sectional views for explaining ascintillator panel in which the end surfaces of a reflective layer arealigned with those of the insulating layer;

FIG. 11A is a schematic cross sectional view for explaining wraparoundof the reflective layer and FIG. 11B is a schematic cross sectional viewfor explaining continuity through moisture;

FIG. 12A is a schematic cross sectional view for explaining adhesionpower of the reflective layer and FIG. 12B is a schematic crosssectional view for explaining a leak by a surface current;

FIG. 13A is a cross sectional view of a scintillator panel in which asize of the reflective layer is smaller than that of the insulatinglayer and FIG. 13B is a partially magnified view thereof;

FIG. 14A is a cross sectional view of a scintillator panel in which aprotective film for the reflective layer is provided in the structureshown in FIGS. 13A and 13B and FIG. 14B is a partially magnified viewthereof;

FIGS. 15A, 15B, 15C, 15D and 15E are schematic cross sectional views ofa scintillator of Embodiment 6;

FIG. 16A is a schematic cross sectional view of a scintillator ofEmbodiment 7 and FIG. 16B is a partially magnified view thereof;

FIG. 17 is a schematic cross sectional view of a radiation detectiondevice of Embodiment 8;

FIGS. 18A, 18B and 18C are schematic cross sectional views of aradiation detection device of Embodiment 9;

FIGS. 19A, 19B, 19C and 19D are schematic cross sectional views of aradiation detection device of Embodiment 10; and

FIG. 20 is a block diagram indicating a schematic structure of an X-raydiagnostic system of Embodiment 11.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be describedusing the drawings.

A scintillator panel of the present invention includes a conductive basemember, a conductive reflective layer made of aluminum or the like, andan insulating layer for preventing corrosion due to contact between thebase member and the reflective layer, which is located therebetween.

It is preferable that this insulating layer has a heat resistance in thecase where it becomes a high temperature state at the time of formationprocesses of the reflective layer, a phosphor, and the like.

As a conductive material, a material including a carbon component isused, in particular, amorphous carbon is preferably used.

When the insulating layer is made so as to be resistant to heat, forexample, at 200° C. or higher, it is resistant to heat to be applied inthe case where the reflective layer and a phosphor layer are formed.Note that the phosphor layer is used as a wavelength converter forconverting radiation into light and is a column-shaped crystallinephosphor or the like made of alkali halide. In particular, when alkalihalide is used for the phosphor layer, it is necessary to performannealing processing at a higher temperature than that at the time ofevaporation in order to activate an activator such as Tl. Thus, in sucha case, the insulating layer is particularly preferable.

The insulating layer may be a single layer or a multilayer. However, itis preferable that a volume resistivity of the insulating layercorresponding to a contact portion with at least the reflective layer is1×10¹⁰ Ωcm or more. A region having a volume resistivity of about 1×10⁸Ωcm or less is a region of semiconductor. In the case of this region,there is a possibility that the resistivity is changed due to a changein a state, for example, an increase in a temperature and it isdifficult to obtain perfect insulation. Thus, the above volumeresistivity is set as a value including a margin. Incidentally, thevolume resistivity of single silicon in semiconductor is 3×10⁵ Ωcm andthat of GaAs is 7×10⁷ Ωcm.

When a silicon compound is formed, an optical band gap becomes largerand it becomes an insulator having a volume resistivity of 1×10¹⁰ Ωcm ormore. Incidentally, SiOx, SiNx, and the like each are a material inwhich the optical band gap and the volume resistivity are satisfied.Further, it is known that such a silicon compound is easy to makechemical bonding to carbon and SiC and the like are very hard materials.

In the semiconductor field, Al and an Al alloy thin film are generallyused as wiring materials. With respect to the adhesion to a siliconcompound, there is a track record in a semiconductor device. On theother hand, tetraalkylsilane (Si—OR, R═CH₃, C₂H₅, C₃H₇) obtained byplasma polymerization has an insulation property of 1×10¹⁰ Ωcm or moreand actually used as a coupling layer which includes mainly carbon andis made of an organic material and metal.

This material is formed by plasma polymerization and has a heatresistance such that it is resistant to heat at 200° C. or higher if thenumber of carbon in alkyl group is about 1 to 3. In other words, amaterial including silicon serves as an insulating heat resistant layerbetween the conductive base member and the reflective layer and has goodadhesion. Thus, such a material is preferable.

A metallic oxide film is made of a stable insulating substance. Thus,most films have a volume resistivity of 1×10¹⁰ Ωcm or more and a heatresistance such that it is resistant to heat at 200° C. or higher.Incidentally, Al₂O₃, SiO₂, TiO₂, MgO, BeO, CeO, HfO₂, ThO₂, UO₂, ZrO₂,or the like can be concretely used. Note that, when a composition ratiois changed, there is a material indicating semiconductor transition.Thus, it is necessary to prevent a change in a composition ratio.

Also, polyimide, a divinylsiloxanebisbenzobutene based resin, amethylxylsesquioxane based resin, polyamideimide, polyethersulfone,polyetherimide, aromatic polyester, and the like each are an insulatingmaterial having a volume resistivity of 1×10²⁰ Ωcm or more and a heatresistance such that it is resistant to heat at 200° C. or higher. Whenthese heat resistive resins are used, since the film thickness can beincreased as compared with the case where a material including siliconis used, insulation breakdown due to rough of a base, a contamination ora pin hole can be further reduced. Thus, these resins are preferable.

Incidentally, when a material including silicon is used, it cannot bemade too thick because of the influence of internal stress thereof.Thus, it is suitable that the thickness is generally set to be severaltens of nm to several hundreds of nm. However, in the case of the heatresistant resin, the thickness can be controlled in a range of severalhundreds of nm to several ten thousands of nm. Further, since theseresins include carbon, the adhesion to carbon is suitable. When a baseis made rough such that a difference between concave and convex is 0.02μm or more to provide an anchor effect, the adhesion power can befurther improved.

Also, when the film thickness of the resin is increased, the surfacethereof can be planarized. Thus, evenness of reflective layer is ensuredand the mirror surface can be kept. In addition, the adhesion to thereflective layer is improved. Thus, this is preferable. Also, continuitybetween the reflective layer and the base member through a pin hole canbe further prevented. Note that, when the difference between concave andconvex exceeds 5 μm, the above planarization effect is reduced. Thus, itis preferable that the difference is within a range of 0.02 μm to 5 μm.With respect to adhesion to Al, there is also a weak combination.However, when some surface treatment, for example, inverse sputtering isperformed before Al film formation, the adhesion power can be furtherimproved.

The material including silicon, the metallic oxide film, and the heatresistant resin have high adhesion power. However, in order to provide afurther effect, a plurality of materials selected from these materialsmay be laminated. In this case, an insulation property with 1×10¹⁰ Ωcmor more is preferably provided for a layer which is in contact with atleast a metallic thin film irrespective of a resistivity of a layerlocated thereunder.

Also, a material having the highest adhesion possible to amorphouscarbon is preferably selected for a contact layer which is in contactwith amorphous carbon and a material having the highest adhesionpossible to Al is preferably selected for a contact layer which is incontact with Al. If the adhesion between the laminated layers isdeteriorated, it is preferable that a composition is gradually changed.

Hereinafter, embodiments of the present invention will be described indetail with reference to the drawings.

(Embodiment 1)

FIG. 1 is a schematic cross sectional view of a radiation detectiondevice of this embodiment. In FIG. 1, reference numeral 110 denotes ascintillator. This scintillator includes a phosphor 112 which is used asa wavelength converter for converting radiation into light, made ofalkali halide, and crystallized in a column shape, a base member 111made of amorphous carbon or the like for supporting the phosphor 112, areflective layer 114 made from an aluminum thin film for reflectinglight converted by the phosphor 112 to a sensor panel 100 side describedlater, an insulating film 115 which is formed between the base member111 and the reflective layer 114 and made of SiNx or the like, and aprotective layer 113 made of an organic resin for protecting thephosphor 112 and the like from outside air. This reflective layer alsoserves to prevent entrance of scattering light such as outside lightinto a sensor.

Since strong bond is produced between silicon in SiNx and carbon inamorphous carbon, adhesion power is high. Further, adhesion between athin film including silicon etc. and aluminum becomes adhesion betweenSiNx and an aluminum thin film. Thus, a high adhesion power state can beproduced as a track record in semiconductor.

Since SiNx has an insulation property and a heat resistance, theamorphous carbon base member 111 and the aluminum thin film (reflectivelayer) 114 are electrically insulated from each other.

Also, in FIG. 1, reference numeral 100 denotes a sensor panel. Thissensor panel includes a glass substrate 101, a photoelectric conversionelement portion 102 composed of a photosensor and a TFT using amorphoussilicon respectively, a wiring portion 103 for transmitting anelectrical signal converted by the photoelectric conversion elementportion 102, an electrode contact layer (portion) 104 for leading theelectrical signal transmitted through the wiring portion 103 to theoutside, a first protective layer 105 made of silicon nitride or thelike, and a second protective layer 106 made of polyimide or the like.

The sensor panel 100 and the scintillator 110 are bonded to each otherby an adhesive 121 and the surroundings are sealed with a sealing member122. Note that the photoelectric conversion element portion 102 canpreferably detect visible light from the phosphor 112. Thus, an MIS typesensor made of amorphous silicon or the like or a PIN type sensor may beused. Also, a TFT or a PIN type diode may be used as a switch. Further,a CMOS sensor or a CCD imaging element may be used. In this case, thesubstrate 101 made of crystal silicon is used.

Also, tiling may be made using plural units of the radiation detectiondevice shown in FIG. 1 according to applications. Further, with respectto the scintillator panel 110, the example in the case where the basemember 111, the insulating layer 115, the reflective layer 114, and thephosphor 112 are laminated from the top of FIG. 1 in this order isindicated. However, the reflective layer 114, the insulating layer 115,the base member 111, and the phosphor 112 may be laminated in thisorder.

FIGS. 2A and 2B show steps of manufacturing the radiation detectiondevice shown in FIG. 1. The base member 111 which is polished to obtaina mirror surface and made of amorphous carbon or the like is washed anddried once, and then an SiNx thin film as the insulating layer 115 isformed thereon to have a thickness of about 300 nm by sputtering or thelike (FIG. 2A). The insulating layer 115 can also be formed by CVD(chemical vapor deposition).

Next, an aluminum thin film is formed as the reflective layer 114 on theinsulating film 115 with a thickness of about 300 nm by sputtering (FIG.2B). As a film formation method of the reflective layer 114, a vacuumevaporation method, an electron beam (EB) method, or the like can alsobe used. When the insulating layer 115 and the reflective layer 114 areformed in succession by the same film formation apparatus, a failure dueto the influence of a contamination and the like can be prevented ascompared with the case where a member (substrate) is taken out from afilm formation chamber in each film formation. Thus, such formation isdesirable.

Next, a phosphor made of alkali halide is formed as the phosphor 112 onthe reflective layer 114 at a temperature of 200° C. or higher, and thenthe whole is covered with a protective layer 113. Thus, the scintillator110 shown in FIG. 1 can be completed. It is desirable that a CVD filmmade of parylene or the like which is generally used and has a highmoisture resistance is used as the protective layer 113.

In this embodiment, the example in the case where SiNx is used for theinsulating layer 115 is indicated. In addition to SiNx, a siliconcompound such as SiOx, an insulating layer including mainly a siliconsuch as tetraalkylsilane (Si—OR, R═CH₃, C₂H₅, C₃H₇), or a metallic oxidefilm may be used. When a silicon compound is used for the insulatinglayer 115, it is preferable that the film thickness is maximized.However, when the film is made too thick, there is the case wherepeeling due to internal stress is caused. Thus, the film thickness ispreferably several tens of nm to several hundreds of nm.

Also, in this embodiment, the example in the case where the aluminumthin film is used as the reflective layer 114 is indicated. However,another metallic layer made of an aluminum alloy, silver, a silveralloy, copper, gold, or the like may be used in accordance with awavelength of light emitted from the phosphor.

Next, an operation of the radiation detection device shown in FIG. 1will be described.

When radiation is entered from the top portion of FIG. 1, it istransmitted through the base member 111, the insulating layer 115, andthe reflective layer 114 and absorbed by the phosphor 112. The phosphor112 emits visible light at the amount of light corresponding to theintensity of the absorbed radiation.

The visible light is converted into an electrical signal by thephotoelectrical conversion element portion 102 and outputted to thewiring 103 in accordance with ON/OFF switching of a TFT. The electricalsignal outputted to each wiring 103 is led to the outside through theelectrode contact layer (portion) 104. In the outside, processing forobtaining a two-dimensional digital image to be displayed on a displayportion is performed by a processing apparatus not shown. Thus,information of radiation made incident on the radiation detection devicecan be converted to obtain a two-dimensional digital image in theoutside.

As described in this embodiment, when amorphous carbons is used for thebase member, and a different conductive material is used for thereflective layer, since corrosion is rapidly progressed, the structureof this embodiment is preferably used.

(Embodiment 2)

FIG. 3 is a cross sectional view of a scintillator 210 according to aradiation detection device of this embodiment. In this embodiment,polyimide is used for an insulating layer 115. Also, the surface of abase member 111 is made rough such that the adhesion to the insulatinglayer 115 is improved. Thus, the adhesion power due to an anchor effectis obtained between the insulating layer 115 and the base member 111. Itmay not be made rough in accordance with a state of the surface of thebase member to be used.

Note that the same reference symbols are used for the same portions asFIG. 1 in FIG. 3. Also, with respect to a sensor panel 100, the same oneas FIG. 1 is preferably used.

The base member 111 is not flat surface. However, when the insulatinglayer 115 is provided to make the surface of the insulating film flat, areflective layer 114 can be formed to be flat and the surface of thereflective layer 114 can be made to obtain mirror reflection. Forfurther planarization, the insulating layer 115 is preferably formedsuch that the film thickness is sufficiently larger than roughness onthe surface of the base member 111. A preferable thickness is about 1 μmto 20 μm. Thus, a thickness of polyimide in this embodiment can beincreased and it is particularly preferable.

Further, when processing such as inverse sputtering is performed beforefilm formation of the reflective layer 114, necessary adhesion powerbetween the insulating layer 115 and the reflective layer 114 can beensured. Of course, since a polyimide is an insulating material having aheat resistance, the conductive base member and the reflective layer canbe electrically insulated from each other.

FIGS. 4A and 4B show steps of manufacturing the scintillator shown inFIG. 3. With a state that the surface becomes desired roughness, thebase member 111 is washed and dried once, and then polyimide for theinsulating layer 115 is applied thereon to have a thickness of aboutseveral μm by spin coating or the like and cured (FIG. 9A). Theapplication of the insulating layer 115 can also be made from a nozzleprovided with a slit by a jet method or a spray method.

Next, an aluminum thin film is formed as the reflective layer 114 on theinsulating layer 115 to have a thickness of about 300 nm by sputteringor the like (FIG. 4B). When the reflective layer 114 is formed, in orderto further improve the adhesion to polyimide for the insulating layer115, surface treatment such as inverse sputtering may be performedimmediately before the film formation. As a film formation method of thereflective layer 114, a vacuum evaporation method, an EB method, or thelike can be also used.

Next, a phosphor made of alkali halide is formed as the phosphor 112 onthe reflective layer 114 at a temperature of 200° C. or higher, and thenthe whole is covered with the protective layer 113. Thus, thescintillator 210 shown in FIG. 3 can be completed. In this embodiment,the example in the case where polyimide is used for the insulating layer115 is indicated. In addition to this, a divinylsiloxanebisbenzobutenebased resin, a methylxylsesquioxane based resin, polyamideimide,polyethersulfone, polyetherimide, aromatic polyester, and the like maybe used. Further, when a resin has good adhesion to a material used forthe base member 111, it is not necessary to make the base member rough.

With respect to the scintillator 210 of this embodiment, the insulatinglayer 115 can be formed to be thick (several μm to 20 μm). Thus, thereis an advantage in that it becomes a strong structure to insulationbreakdown due to a foreign object and the like. Also, since it is notrequired that the base member 111 is polished to obtain a mirrorsurface, there is an advantage in that a cost is reduced by thatcontent.

(Embodiment 3)

FIG. 5 is a cross sectional view of a scintillator 310 according to aradiation detection device of Embodiment 3 of the present invention. Inthis embodiment, a divinylsiloxanebisbenzobutene based resin(hereinafter referred to as a “BCB”) is used for an insulating layer115. Also, a second insulating layer 116 made of SiNx or the like isprovided between the insulating layer 115 and a reflective layer 114.Note that the same reference symbols are used for the same portions asFIG. 3 in FIG. 5. Also, with respect to a sensor panel 100, the same oneas FIG. 1 is used.

With respect to the scintillator 310 shown in FIG. 5, as in the case ofthe scintillator shown in FIG. 3, the surface of a base member 111 ismade rough to improve the adhesion to the insulating layer 115 and thesurface of the insulating layer 115 is also flat. The film thickness ofthe insulating layer 115 is preferably determined as in the case of FIG.3 and a preferable thickness is about 1 μm to 10 μm.

It is said that a degree of adhesion between SiNx or the like and a BCBis high in a semiconductor field. Thus, when SiNx or the like is usedfor the second insulating layer 116, the bond to the BCB as a materialof the insulating layer 115 can be made strong. Further, since SiNx is amaterial having a high moisture resistance, it also serves as a moistureresistant layer. Since both the BCB and SiNx are insulating materials,electrical insulation between the conductive base member and thereflective layer is also ensured. Since both materials have a heatresistance such that it is resistant to heat at 200° C. or higher, it isnot difficult to manufacture the radiation detection device.

FIGS. 6A to 6C show steps of manufacturing the radiation detectiondevice shown in FIG. 5. The base member 111 made of amorphous carbon orthe like, which surface is made rough to same extent is washed and driedonce, and then the BCB for the insulating layer 115 is applied thereonto have a thickness of about several μm by spin coating or the like andcured (FIG. 6A). The application of the insulating layer 115 can also bemade from a nozzle provided with a slit by a jet method or a spraymethod.

Next, SiNx is formed for the second insulating layer 116 on theinsulating layer 115 by sputtering or the like (FIG. 6B). The SiNx maybe formed by CVD.

Next, the reflective layer 114 is formed on the second insulating layer116 to have a thickness of about 300 nm by sputtering or the like (FIG.6C). When the reflective layer 114 is formed, in order to furtherimprove the adhesion to SiNx for the second insulating layer 116,surface treatment such as inverse sputtering is preferably performedimmediately before the film formation. As a film formation method of thereflective layer 114, a vacuum evaporation method, an EB method, or thelike can be also used.

Next, a phosphor made of alkali halide is formed as the phosphor 112 onthe reflective layer 114 at a temperature of 200° C. or higher, and thenthe whole is covered with a protective layer 113. Thus, the scintillator310 shown in FIG. 5 can be completed.

In this embodiment, various materials described above can be used forthe insulating layer 115. Further, when a material has good adhesion toa material of the base member 111, it is not necessary to make thesurface of the base member 111 rough.

Also, in this embodiment, the example in the case where SiNx is used forthe second insulating layer 116 is described. However, in addition tothis, a silicon system insulating film made of SiOx or the like or ametallic oxide film may be used.

When the second insulating layer 116 is formed, a moisture resistance inthe scintillator 310 shown in FIG. 5 can be further improved as comparedwith the scintillator shown in FIG. 3.

(Embodiment 4)

FIG. 7 is a schematic cross sectional view of a scintillator 410according to a radiation detection device of this embodiment. In thisembodiment, respective silicon system materials are used for aninsulating layer 115 and a second insulating layer 116. An SiCx filmhaving Si—C bonding, which is capable of reducing a structuredisturbance in the case of the bond to amorphous carbon is used as theinsulating layer 115. Also, an SiOx film having good adhesion to thereflective layer 114 is used as the second insulating layer 116. Notethat the same reference symbols are used for the same portions as FIG. 3in FIG. 7. Also, with respect to a sensor panel 100, the same one asFIG. 1 is used.

With respect to the scintillator 410 shown in FIG. 7, as in the case ofthe scintillator shown in FIG. 1, the surface of the base member 111 isprocessed to be a mirror surface. As described above, SiCx having Si—Cbonding is used for the insulating layer 115. Thus, the adhesion powerto the base member 111 can be increased. Also, since both SiOx and SiCxare silicon system materials, the adhesion power between the secondinsulating layer 116 and the insulating layer 115 is inherently high.Further, since a structure of SiOx and aluminum has a track record in asemiconductor field, a superior degree of adhesion is obtained.Furthermore, when a composition of SiCx and SiOx is gradually changed,an interlayer interface can be eliminated and the adhesion power can befurther improved.

Note that, since a volume resistivity of SiC is smaller, such as 1×10⁻⁴Ωcm two layers of SiC and SiO2 are constructed using SiO2 having aninsulation property and function as the insulating layer. Thus, thefirst insulating layer and the second insulating layer can befunctionally separated to use them.

Note that, even in the case of this embodiment, as in Embodiment 1 andthe like, an aluminum ally, silver, a silver alloy, copper, or gold canbe also used for the reflective layer 114 in addition to an aluminumthin film. With respect to the second insulating layer 116, a materialmay be changed in consideration of the degree of adhesion and the likeaccording to a material of the reflective layer 114.

FIGS. 8A to 8C show steps of manufacturing the radiation detectiondevice shown in FIG. 7. The conductive base member 111 made of amorphouscarbon or the like, whose surface is processed to be a mirror surface iswashed and dried once, and then SiCx for the insulating layer 115 isformed thereon by plasma decomposition while flowing a gas of SiH4+CH4by a CVD method or the like (FIG. 8A).

Next, SiOx for the second insulating film 116 is formed on theinsulating layer 115 while flowing a gas of SiH₄+H₂O by a CVD method orthe like (FIG. 8B). In order to further improve the adhesion powerbetween the insulating layer 115 and the second insulating layer 116, agas composition may be gradually changed from SiH₄+CH₄ to SiH₄+H₂O whilekeeping discharge.

Next, an aluminum thin film is formed as the reflective layer 114 onSiOx to have a thickness of about 300 nm by a method such as sputtering(FIG. 8C). When the reflective layer 114 is formed, in order to furtherimprove the adhesion to SiOx as a material of the second insulatinglayer 116, surface treatment such as inverse sputtering is preferablyperformed immediately before the film formation. As a film formationmethod of the reflective layer 114, a vacuum evaporation method, an EBmethod, or the like can be also used.

Next, a phosphor made of alkali halide is formed as the phosphor 112 onthe reflective layer 114 and then the whole is covered with a protectivelayer 113. Thus, the scintillator 410 shown in FIG. 7 can be completed.

In this embodiment, a material having good adhesion to a material of thebase member 111 as a base is selected for the insulating layer 115.Also, a material having good adhesion to a material of the reflectivelayer 114 as an upper layer is selected for the second insulating layer116. Thus, the adhesion power is improved.

Further, in this embodiment, a composition of the insulating layer 115and the second insulating layer 116 may be gradually changed to realizestronger adhesion power.

(Embodiment 5)

FIG. 9 is a schematic cross sectional view of a scintillator panelaccording to a radiation detection device of this embodiment. Accordingto a structure of this embodiment, a protective film 119 for areflective layer is provided between a reflective layer and a wavelengthconverter layer. When such a structure is used, corrosions to thereflective layer can be suppressed. As the protective layer for thereflective layer, SiO₂, SiNx, or the like may be used or an organicsubstance such as polyimide may be used.

Table 1 indicates a result of a corrosion test with respect to thepresence or absence of a first insulating layer and a second insulatinglayer. Note that the first insulating layer is provided between areflective layer and a base member and the second insulating layer isprovided between the reflective layer and a phosphor layer. Actually, animmersion test using an aqueous solution of CsI (2 normalities) isperformed.

TABLE 1 Second First insulating Reflective insulating Base No. layerlayer layer member Evaluation 1 Absent Al Absent a-C X 2 Exist Al Absenta-C Δ (SiO₂) 3 Absent Al Exist a-C ◯ (polyimide) 4 Exist Al Exist a-C ⊚(polyimide) (polyimide) Note: X denotes BAD, Δ denotes UNSATISFACTORY, ◯denotes GOOD, and ⊚ denotes EXCELLENT

As indicated in Table 1, when the protective layer for the reflectivelayer is provided, it is clear that the prevention of corrosion isfurther improved.

With respect to Embodiments 1 to 5, when end portions of the base memberis processed by beveling, since the insulating layer can be provided forthe entire base member, it is preferable. Also, beveling of the basemember will be described in detail in embodiments described below.

(Embodiment 6)

In the case of a scintillator panel according to a radiation detectiondevice of this embodiment, a forming region of an insulating layerprovided between a base member and a reflective layer is made largerthan a forming region of the reflective layer. With this structure,electrochemical corrosion can be further prevented and durability totemperature and humidity can be further increased.

FIGS. 10A and 10B are schematic views of the following structure. Thatis, an insulating layer 502, a reflective layer 503, and a phosphorlayer 504 are laminated on a conductive base member 501 and the fullcircumference is finally protected with a protective layer 505 so thatthe forming region of the insulating layer is nearly equal to theforming region of the reflective layer and end portions of thereflective layer are aligned with end portions of the insulating layer.

In the case of such a structure, when a durability test to temperatureand humidity is performed at a temperature of 70° C. and 90%, theoccurrence of electrochemical corrosion is appeared in a portion atpossibility of about 10% (one item of 10 items) for 1000 hours.

The following is considered as the reason for which corrosion is causedin a portion. Note that FIG. 10A is a cross sectional view of ascintillator panel and FIG. 10B is a magnified view of an end portion ofthe scintillator panel shown in FIG. 10A.

(1) Wraparound of the Reflective Layer

FIG. 11A is a schematic cross sectional view for explaining wraparoundof the reflective layer and shows a structure of the insulating layer502 and the reflective layer 503. The insulating layer 502 is providedto insulate the metallic reflective layer 503 from the conductive basemember 501 and electrochemical corrosion of the reflective layer 503 isprevented by this insulation. However, there is the case where metallicreflective layer particles released from a target are moved to endsurfaces and rear surfaces of the base member 501 and the insulatinglayer 502 so as to wrap around them at sputtering used for forming themetallic reflective layer 503.

In such a case, as shown in FIG. 11A, metallic particles and the likeused in the reflective layer 503 are moved to end surfaces 511 of thebase member 501 and the insulating layer 502 so as to wrap around them.Thus, there is a fear that continuity between the base member 501 andthe reflective layer 503 is produced. Therefore, there is a fear thatelectrochemical corrosion is caused by the continuity in the endportions 511 of the base member.

(2) Continuity Through Moisture

FIG. 11B is a schematic cross sectional view for explaining continuitythrough moisture. After the base member 501, the insulating layer 502,and the reflective layer 503 are laminated, when the phosphor layer 504is formed or when the protective layer for the reflective layer isformed, there is the case where washing is performed. This is because,when the phosphor layer 504 is formed on a foreign object, the amount oflight to be emitted in that region is decreased. When the protectivelayer for the reflective layer is formed on a foreign object, there isthe case where washing is performed because of the same reason as in thecase of the phosphor layer 504.

When moisture 512 is adhered to the end portions of the base member 501during washing, continuity between the reflective layer 503 and the basemember 501 is produced and there is the case where this becomes thereason for electrochemical corrosion.

Also, when moisture is adhered as described above, there is a fear thatmoisture is adhered to the end portions through the protective film at adurability test to temperature and humidity and electrochemicalcorrosion is promoted.

(3) Adhesion Power of the Reflective Layer

FIG. 12A is a schematic cross sectional view for explaining adhesionpower of the reflective layer. When the reflective layer 503 is formedon a large area, the adhesion power of the reflective layer 503 to theinsulating layer 502 is decreased from the center toward the end surface(end portion 514 in the drawing). It is generally considered that thisis because a distance between the base member 501 (insulating layer 502)and the target is shortest in the central portion of the base member 501(insulating layer 502) and longest in the end portion of the base member501 (insulating layer 502) at formation of the reflective layer bysputtering (in the case where it is considered that a size of the targetis smaller than the base member 501 and the insulating layer 502). Thus,since the adhesion power between the insulating layer 502 and thereflective layer 503 in the end portion 514 is weak, there is the casewhere peeling is cased therebetween and there is the case where peelingis progressed from the end portion 514 as an initial point toward theinner portion. Therefore, there is a fear that corrosion is caused and apreferable reflection effect cannot be obtained.

(4) Leak by Surface (Skin) Current

FIG. 12B is a schematic cross sectional view for explaining a leak by asurface (skin) current. When forming areas (sizes) of the base member501, the insulating layer 502, and the reflective layer 503 or formingareas (sizes) of the insulating layer 502 and the reflective layer 503are identical and end portions are aligned, a distance between theconductive base member 501 and the reflective layer 503 in an endsurface 515 corresponds to only the thickness of the insulating layer502. For example, when the thickness of the insulating layer 502 isgiven by 1 μm, the distance between the base member 501 and thereflective layer 503 in the end surface 515 is 1 μm.

A small surface (skin) current flows into the end surfaces 515 of thebase member 501, the insulating layer 502, and the reflective layer 503.This surface current flows between the conductive base member 501 andthe reflective layer 503. However, the amount of current is inverselyproportional to the distance between the base member 501 and thereflective layer 503 and the surface current becomes hard to flow withincreasing the distance.

Also, electrochemical corrosion is cased by flowing a current betweenthe conductive base member 501 and the reflective layer 503. Thus, it ispreferable that the distance between the base member 501 and thereflective layer 503 is maximized.

As described above, in order to further improve durability totemperature and humidity to electrochemical corrosion, it is requiredthat the above reasons (1) to (4) are solved.

FIGS. 13A and 13B and FIGS. 14A and 14B are schematic cross sectionalviews indicating a structure of this embodiment in order to furtherimprove an effect for preventing electrochemical corrosion.

As shown in FIGS. 13A and 13B, when the reflective layer 503 is formedon the conductive base member 501 and the insulating layer 502, it isformed so as to keep a clearance 518 at a distance from the end portionof the insulating layer 502.

As means for keeping the clearance of the reflective layer, a method ofadhering a tape onto the insulating layer 502 in advance and performingmasking, a method of performing masking using a substrate holder atsputtering, or a method of etching only the end portions in a later stepmay be used.

Thus, since the distance between the conductive base member 501 and thereflective layer 503 becomes long, continuity due to wraparound andcontinuity due to moisture absorption are suppressed. Also, with respectto the surface current, since the distance becomes long, a resistance isincreased. Therefore, an insulation effect between the conductive basemember 501 and the reflective layer 503 can be further improved.

FIGS. 14A and 14B show an example in the case where the protective layer508 for the reflective layer is formed on the reflective layer 503 inaddition to the structure shown in FIGS. 13A and 13B.

As indicated in this example, when the full circumference of thereflective layer 503 is enclosed with an insulating material such as aresin, the occurrence of electrochemical corrosion is reduced. Inparticular, when the end portions are covered with the insulating layer502 and the protective layer 508 for the reflective layer, factors ofcontinuity by the outside, for example, moisture, a foreign object, andthe like can be completely prevented.

Also, when the insulation property in only the end portions is improved,the same material can be used for the protective layer 508 for thereflective layer and the insulating layer 502 to improve the adhesion inthe end portions or plasma processing or corona discharge processing canbe also performed for only the end portions to improve the wettabilityand the adhesion.

Also, even when the surfaces of the end portions are made rough, thedistance between the base member and the reflective layer becomes longby uneven portions. Thus, the surface current is hard to flow.

In addition, it is an effective method that the full circumference ofnot only the reflective layer itself but the conductive base member iscovered with the insulating layer by a method such as dipping.

FIGS. 15A to 15E are schematic cross sectional views of a radiationdetection device of this embodiment and show manufacturing stepsthereof.

In FIG. 15A, amorphous carbon 1011 is used as a base member for forminga scintillator and made rough such that surface roughness becomes about0.2 μm to improve the adhesion power to an insulating layer laminatedthereon by an anchor effect.

The insulating film is provided on the base member 1011. Note that apolyimide resin 1015 having a heat resistance such as it is resistant to200° C. or higher and a volume resistivity of 1×10¹⁰ Ωcm or more ispreferably used as a material of the insulating layer.

The polyimide resin is applied by a spin coat method such that thethickness becomes 5 μm and cured.

FIG. 15B is a schematic view in the case where a reflective layer formedon the amorphous carbon 1011 and the polyimide resin 1015.

Aluminum having high reflectance through approximately the entire regionof visible light is used as a material of a reflective layer 1014 andformed by sputtering.

At sputtering, as shown in FIG. 15E, it is located such that outer endportions 1018 of the amorphous carbon 1011 and the polyimide resin 1015can be masked at 6 mm by using a substrate holder 1017.

Thus, the outer portions are masked by the substrate holder 1017 tolimit a forming area (forming region) of the reflective layer 1014 andto prevent wraparound to the end portions of the amorphous carbon 1011and the polyimide resin 1015. Therefore, the distance between thealuminum 1014 and the amorphous carbon 1011 can be increased.

As a result, the insulation between the amorphous carbon 1011 and thealuminum 1014 is ensured by preventing wraparound of the aluminum 1014and the continuity due to moisture absorption and the influence of asurface current can be relaxed.

FIG. 15C shows an example in the case where a column-shaped crystalphosphor made of alkali halide, for example, CsI (cesium iodide) 1012 isformed on the substrate shown in FIG. 15B by evaporation and then theentire substrate is covered with parylene 1013 for a protective layer.The CsI (cesium iodide) 1012 is formed by vacuum evaporation. Atannealing after evaporation, a substrate temperature is increased toabout 200%. However, since the polyimide resin 1015 having a heatresistance is used for the insulating film, insulation breakdown betweenthe base member 1011 and the aluminum 1014 due to dissolving is notcaused.

Also, the parylene 1013 for the protective layer is a material havinghigh transmittance in visible light and low moisture permeability. It issuitable as a material formed between the phosphor layer and a sensorpanel and used for coating the full circumference of the surface by CVD(chemical vapor deposition).

As shown in FIG. 15D, the thus formed scintillator panel 1010 is bondedto the sensor panel through a heat curable type acrylic based resin 1021to obtain the radiation detection device.

In FIG. 15D, reference numeral 1000 denotes a sensor panel. This sensorpanel includes a glass substrate 1001, a photoelectric conversionelement portion 1002 composed of a photosensor and a TFT using amorphoussilicon respectively, a wiring portion 1003 for transmitting anelectrical signal converted by the photoelectric conversion elementportion 1002, an electrode contact layer (portion) 1004 for leading theelectrical signal transmitted through the wiring portion 1003 to theoutside, a first protective layer 1005 made of silicon nitride or thelike, and a second protective layer 1006 made of polyimide or the like.

The sensor panel 1000 and the scintillator 1010 are bonded to each otherthrough an adhesive 1021 and the surroundings are sealed with a sealingmember 1022. Note that the photoelectric conversion element portion 1002can preferably detect visible light from the phosphor layer 1012. Thus,an MIS type sensor or PIN type sensor made of amorphous silicon or thelike respectively may be used. Also, a TFT or a PIN type diode may beused as a switch. Further, a CMOS sensor or a CCD imaging element may beused. In this case, the substrate 1001 made of crystal silicon is used.

Also, tiling may be made using plural units of the radiation detectiondevice shown in FIG. 15D according to applications. Further, withrespect to the scintillator panel 1010, the example in the case wherethe base member 1011, the insulating layer, the reflective layer 1014,and the phosphor layer 1012 are laminated from the top of FIG. 15D inthis order is indicated. However, the reflective layer 1014, theinsulating layer, the base member 1011, and the phosphor layer 1012 maybe laminated in this order.

In this embodiment, the example in the case where polyimide is used forthe insulating layer 1015 is indicated. In addition to this, adivinylsiloxanebisbenzobutene based resin, a methylxylsesquioxane basedresin, polyamideimide, polyethersulfone, polyetherimide, aromaticpolyester, and the like may be used. Further, when a resin has goodadhesion to a material used for the base member 1011, it is notnecessary to make the resin rough.

When the above organic material is used, the insulating layer 1015 canbe formed to be thick (several μm to 20 μm). Thus, there is a merit suchas it becomes a strong structure to insulation breakdown due to aforeign object and the like. Also, since it is not required that thebase member 1011 is polished to obtain a mirror surface, a cost isreduced by that content and thus it is preferable.

(Embodiment 7)

FIG. 16A and FIG. 16B are schematic cross sectional views of ascintillator panel of this embodiment. FIG. 16B is a magnified view of aportion of FIG. 16A.

Materials and forming methods, which are used for the base member, thereflective layer, and the insulating layer are preferably identical toEmbodiment 2.

In this embodiment, aluminum 1014 for the reflective layer is formed bysputtering while masking using a substrate holder, and then a polyimideresin 1019 made of the same material as the insulating layer is formedin an upper layer thereof as a protective film for the reflective layerby a spin coat.

Thus, when both surfaces of the aluminum 1014 for the reflective layer1014 are covered with a polyimide resin for the insulating layer 1015and the polyimide resin for the protective film 1019 for the reflectivelayer, since end portions of the reflective layer 1014 are also coveredsimultaneous with the aluminum, the insulation to the base member 1011can be further improved.

When the reflective layer 1014 is sandwiched by using the polyimideresin for insulating layer 1015 and polyimide resin for the protectivefilm 1019 for the reflective layer, the adhesion between the insulatinglayer and the protective film for the reflective layer in the endportions 122 can be improved and peeling of aluminum can be furtherprevented.

(Embodiment 8)

FIG. 17 is a schematic cross sectional view of a scintillator panel ofthis embodiment. In this embodiment, the same layer structure asEmbodiment 7 is obtained. That is, a structure of a base member, aninsulating layer, a reflective layer, a protective film for a reflectivelayer, a phosphor layer, and a protective layer is obtained and the samematerials as Embodiment 7 are preferably used.

In this embodiment, before the polyimide resin for protective film forthe reflective layer is formed, plasma processing using plasma 124 isperformed to improve the wettability and the adhesion in the endportions 123. A rough surface effect, a cleaning effect, and activationare made by plasma processing, the wettability of the polyimide resinfor protective film for the reflective layer, which is applied later canbe improved, the adhesion in the end portions 123 is improved, and theinsulation property between the reflective layer and the base member isincreased.

Also, in addition to plasma processing, even when corona dischargeprocessing or cleaning using a solvent such as IPA is performed, theadhesion is improved.

(Embodiment 9)

FIGS. 18A to 18C are schematic cross sectional views of a scintillatorpanel of this embodiment.

In this embodiment, the same layer structure and materials asEmbodiments 6 and 7. Beveling is performed for the end portions of abase member 125 so as to be a radius of curvature R.

Beveling 126 is performed for a thickness of 1 mm in the base member 125and it is set to be a radius of curvature R=3 mm.

Thus, when beveling is performed for the end portions of the base member125, resin flow to the end portions at formation of the insulating layerbecomes easy. On the other hand, when beveling is not performed, aninsulating film 127 can be applied to the end portions which is notapplied.

Therefore, the distance between the base member 125 and the reflectivelayer 1014 can be further increased.

Also, wraparound of a protective film 128 for a reflective layer, whichis formed in an upper layer is also made to the end portions. Thus, anadhesion distance (area) of the insulating film 127 as a base isincreased to further improve the insulation property. Reference numeral129 denotes a phosphor layer formed by evaporation using CsI (cesiumiodide) and 130 denotes parylene for a protective layer.

Also, with respect to beveling of the base member, there is an effecteven when it is applied to Embodiments 1 to 5.

(Embodiment 10)

FIGS. 19A to 19D are schematic cross sectional views of a scintillatorpanel of this embodiment. In this embodiment, when a polyimide resin 131for an insulating layer is formed for amorphous carbon 130 for a basemember by dipping. A merit for forming the polyimide resin 131 for theinsulating layer by dipping is that the full circumference of theamorphous carbon 130 can be coated with the-polyimide resin 131 for aninsulating layer having a heat resistance.

Thus, the full circumference of the amorphous carbon 130 is coated withthe polyimide resin 131 to make the insulation in the base member side.Therefore, as shown in FIG. 19B, when a reflective layer 132 made ofaluminum is formed, since it is not required that sputtering isperformed during masking, an effective area of phosphor layer can befurther increased.

In FIG. 19C, a polyimide resin 133 for a protective layer for reflectivelayer is formed on the reflective layer 132 made of aluminum through thefull circumference by dipping. After that, as shown in FIG. 19D, aphosphor layer (CsI) 134 is formed on approximately the entire surfaceof the base member. Then, parylene for a protective layer 135 is formed.Thus, a scintillator panel 136 is manufactured. In this embodiment, boththe insulating layer 131 and the protective film 133 for the reflectivelayer are provided on the entire surface of the base member. However,even when either is provided, there is a sufficient effect. When bothare provided, the effect is further improved.

Table 2 indicates a result in the case where durability tests totemperature and humidity are simultaneously performed for separatescintillator panels according to the configuration shown in FIG. 10A(structure of the base member, the insulating layer, the reflectivelayer, the phosphor layer, and the protective layer is obtained and thereflective layer is extended to the end surfaces of the insulatinglayer), Embodiment 6, and Embodiment 7.

TABLE 2 Configuration shown in FIG. 10A Embodiment 6 Embodiment 7Corrosion 1000 hours 1200 hours 2000 hours occurrence time

As can be seen from table 2, according to structures of Embodiments 6and 7, the durability is further improved as compared with the structurein which end portions of the reflective layer are aligned to those ofthe insulating layer. Also, it is apparent that highest durability isobtained in Embodiment 7.

Condition: temperature is 70° and humidity is 90%. Evaluation isvisually performed at a time when electrochemical corrosion of aluminumis caused (the presence or absence of spot patterns).

(Embodiment 11)

FIG. 20 is a block diagram indicating a schematic structure of an X-raydiagnostic system of this embodiment. An X-ray 6060 generated in anX-ray tube 6050 is transmitted through a chest 6062 of a patient or aperson to be examined 6061 and incident into a photoelectric conversiondevice 6040 in which a phosphor is mounted in the upper portion. Theincident X-ray includes information with respect to an inner portion ofthe body of the patient 6061. The phosphor emits light in response tothe incident X-ray. Photoelectric conversion for the emitted light isperformed to obtain electrical information. This information isconverted into digital information and image-processed by an imageprocessor 6070 such that it can be observed on a display 6080 of acontrol room.

Also, this information can be transferred to a remote place through atransmission means such as a telephone line 6090 and can be displayed ona display 6081 or stored in a storage means such as an optical disk in adoctor room or the like as other place. Thus, a diagnosis by a doctor inthe remote place is possible. Further, this information can be recordedin a film 6110 by a film processor 6100.

Note that the case where the radiation detection device is applied tothe X-ray diagnostic system is described in this embodiment. However,the radiation detection device can be also applied to, for example, aradiation imaging system such as a nondestructive test apparatus.

1. A scintillator panel comprising a conductive base member forsupporting a phosphor layer and a reflective layer for reflecting alight converted by the phosphor layer, wherein an insulating layer islocated between said conductive base member and said reflective layer,and said insulating layer is formed in an area larger than an area inwhich said reflective layer is formed.
 2. A scintillator panel accordingto claim 1, wherein said phosphor layer is crystallized in a columnshape.
 3. A scintillator panel according to claim 1, wherein saidconductive base member is made of material containing an amorphouscarbon.
 4. A scintillator panel according to claim 1, wherein saidconductive base member has a surface on which said insulating layer isformed, and the surface of the conductive base member is coarse suchthat a difference between convex and concave is 0.02 μm-5 μm.
 5. Ascintillator panel according to claim 1, further comprising a secondinsulating layer located between said insulating layer and saidreflective layer.
 6. A scintillator panel according to claim 5, whereinboth of said insulating layer and said second insulating layer areformed by chemical vapor deposition method, in a manner such that, afterforming said insulating layer at a predetermined thickness, atmospheregas composition is changed to form said second insulating layer.
 7. Ascintillator panel according to claim 1, wherein said conductive basemember is made of material having a volume resistivity of 1×10¹⁰ Ωcm orless.
 8. A scintillator panel according to claim 1, wherein said basemember is chamfered at an end surface thereof to have an radius ofcurvature: R=1 mm or more.
 9. A radiation detection device comprising ascintillator panel according to claim 1, wherein a sensor panel whereina photoelectric conversion device for converting a light emitted fromsaid scintillator panel into an electric signal and wiring section fortransmitting the electric signal converted by said photoelectricconversion device are located, and said scintillator panel are bondedtogether.
 10. A radiation detection system comprising signal processingmeans for processing a signal from a radiation detection deviceaccording to claim 9; recording means for recording a signal from saidsignal processing means; display means for displaying the signal fromsaid signal processing means; transmitting means for transmitting thesignal form said signal processing means; and a radiation generatingsource for generating the radiation.